
RQ1A070ZP
Electrical characteristics (Ta=25 ° C)
Data Sheet
Parameter
Gate-source leakage
Symbol
I GSS
Min.
?
Typ.
?
Max.
± 10
Unit
μ A
Conditions
V GS =± 10V, V DS = 0V
Drain-source breakdown voltage V (BR) DSS
? 12
?
?
V
I D = ? 1mA, V GS = 0V
?
?
?
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
I DSS
V GS (th)
R DS (on)
Y fs ?
C iss
C oss
C rss
t d (on) ?
t r
t d (off) ?
t f
Q g ?
Q gs ?
Q gd ?
?
? 0.3
?
?
?
?
12
?
?
?
?
?
?
?
?
?
?
?
?
8
11
15
19
?
7400
800
750
35
95
310
190
58
11
10
? 1
? 1.0
12
16
23
38
?
?
?
?
?
?
?
?
?
?
?
μ A
V
m ?
m ?
m ?
m ?
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V DS = ? 12V, V GS = 0V
V DS = ? 6V, I D = ? 1mA
I D = ? 7A, V GS = ? 4.5V
I D = ? 3.5A, V GS = ? 2.5V
I D = ? 3.5A, V GS = ? 1.8V
I D = ? 1.4A, V GS = ? 1.5V
V DS = ? 6V, I D = ? 7A
V DS = ? 6V
V GS = 0V
f = 1MHz
V DD ? 6V
I D = ? 3.5A
V GS = ? 4.5V
R L 1.7 ?
R G = 10 ?
V DD ? 6V
I D = ? 7A
V GS = ? 4.5V
R L 0.86 ? / R G = 10 ?
? Pulsed
Body diode characteristics (Source-drain) (Ta=25 ° C)
Parameter
Forward voltage
Symbol
V SD ?
Min.
?
Typ.
?
Max.
? 1.2
Unit
V
Conditions
I S = ? 7A, V GS = 0V
? Pulsed
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2009.08 - Rev.A